2N6520 -0.5 a, -350 v pnp plastic encapsulated transistor elektronische bauelemente 02-sep-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high voltage transistors absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -350 v collector to emitter voltage v ceo -350 v emitter to base voltage v ebo -5 v collector current - continuous i c -0.5 a collector power dissipation p c 0.625 w thermal resistance, junction to ambient r ja 200 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo -350 - - v i c = -100 a, i e = 0a collector to emitter breakdown voltage v (br)ceo * -350 - - v i c = -1ma, i b = 0a emitter to base breakdown voltage v (br)ebo -5 - - v i e = -10 a, i c = 0a collector cut-off current i cbo - - -50 na v cb = -250v, i e = 0 a emitter cut-off current i ebo - - -50 na v eb = -4v, i c =0 ma dc current gain h fe * 20 - - v ce = -10v, i c = -1ma 30 - - v ce = -10v, i c = -10ma 30 - 200 v ce = -10v, i c = -30ma 20 - 200 v ce = -10v, i c = -50ma 15 - - v ce = -10v, i c = -100ma collector to emitter saturation voltage v ce(sat) * - - -0.3 v i c = -10ma, i b = -1ma - - -0.35 i c = -20ma, i b = -2ma - - -0.5 i c = -30ma, i b = -3ma - - -1.0 i c = -50ma, i b = -5ma base to emitter saturation voltage v be(sat) * - - -0.75 v i c = -10ma, i b = -1ma - - -0.85 i c = -20ma, i b = -2ma - - -0.9 i c = -30ma, i b = -3ma base to emitter voltage v be(on) * - - -2 v v ce = -10v, i c = -100ma collector-base capacitance c cb - - 6 pf v cb = -20v, i e = 0a, f=1mhz emitter-base capacitance c eb - - 80 pf v eb = -0.5v, i c = 0a, f=1mhz transition frequency f t * 40 - 200 mhz v ce = -20v, i c = -10ma, f=20mhz *pulse test pulse width Q 300 s, duty cycle Q 2.0%. to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 a c e k f d b g h j
2N6520 -0.5 a, -350 v pnp plastic encapsulated transistor elektronische bauelemente 02-sep-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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